3DD313 PDF datasheet can download.
This product has NPN transistor functions.
This is one of the semiconductor types.
This has TO-220 Type package.
Manufacturers of the product is LZG.
Image and pinout :
Some of the text files within the PDF file
3DD313 is Silicon NPN semiconductor transistor. Purpose: used for low frequency power amplification.
Limit parameters/Absolute maximum ratings(Ta=25℃) Parameter symbol Symbol Value Rating Unit Unit VCBO VCEO VEBO IC ICP PC(Ta=25℃) PC(TC =25℃) Tj Tstg 60 60 5.0 3.0 8.0 1.75 30 150 -55~150 V V V A A W W ℃ ℃ Electrical performance parameters/Electrical characteristics (Ta=25℃) Numerical parameter symbol Symbol Test condition Test Condition Rating Unit maximum value Max Unit minimum value Min Typical value Typ ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob VCB=20V VCE=60V VEB=4.0V VCE=2.0V VCE=2.0V IC=2.0A VCE=2.0V VCE=5.0 V VCB=10V IE=0 RBE=∞ IC=0 IC=1.0A IC=0.1A IB=0.2A IC=1.0A IC=0.5A f=1.0MHz C:40~80 40 40 0.4 8.0 65 D:60 ~120 E:100~200 0.1 5.0 1.0 320 1.0 1.5 mA mA mA V V MHz pF hFE binning/hFE Classifications: F:160~320 http://www.lzg.so 2SD313(3DD313) http://www. lzg.so [ … ]
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 60 V
2. Collector to Emitter Voltage: Vceo = 60 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 3 A
5. Total Dissipation: Pc = 1.75 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperatue: Tsg = -55 ~ +150°C
Please refer to the file for details.