SSM6J808R Datasheet – 40V, 7A, P-Channel MOSFET

This post describes for the MOSFET SSM6J808R.

The function of this semiconductor is 40V, 7A, P-Channel MOSFET.

The package is TSOP6F pin type

The manufacturer of this component is Toshiba Semiconductor.

See the preview image and the Datasheet PDF file for more information.

 

Description

The SSM6J808R is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba Semiconductor & Storage.

Features

1. AEC-Q101 qualified

2. 4-V drive

3. Low drain-source on-resistance

(1) RDS(ON) = 28 m Ω (typ.) (VGS = -10 V)

(2) RDS(ON) = 35 m Ω (typ.) (VGS = -4.5 V)

(3) RDS(ON) = 38 m Ω (typ.) (VGS = -4 V)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 40V

2. Gate to source voltage: VGSS = -20 / +10 V

3. Drain current: ID = – 7A

4. Total Power Dissipation: Pd = 1.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications

• Power Management Switches

 

SSM6J808R Datasheet