This post describes for the Power FET MMDF2P02HD.

The function of this semiconductor is 20V, 2A, DUAL TMOS POWER FET.

The package is SO-8 type.

The manufacturer of this parts is Motorola Semiconductors.

See the preview image and the MMDF2P02HDR2G Datasheet PDF file for more information.

1 page
MMDF2P02HDR2G datasheet pinout


MMDF2P02HDR2G is TMOS P-Channel Field Effect Transistor.

MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. […]

2 page
MMDF2P02HDR2G pdf schematic


•Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

•Logic Level Gate Drive — Can Be Driven by Logic ICs

•Miniature SO–8 Surface Mount Package — Saves Board Space

•Diode Is Characterized for Use In Bridge Circuits

•Diode Exhibits High Speed, With Soft Recovery

•IDSS Specified at Elevated Temperature

•Avalanche Energy Specified


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 20 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 3.3 A

4. Drain power dissipation : PD = 2 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C


MMDF2P02HDR2G Datasheet