The W8NB100 is STW8NB100 made by ST Microelectronics.
Brief overview of the content in a W8NB100 PDF file
www datasheetgo.com STW8NB100 N CHANNEL 1000V 1 2 8A TO 247 PowerMESH MOSFET PRELIMINARY DATA TYPE STW8NB100 s s s s s s s V DSS 1000 V R DS on 1 5 ID 8A TYPICAL RDS on 1 2 EXTREMELY HIGH dv dt CAPABILITY 30V GATE TO SOURCE VOLTAGE RATING 100 AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD TO 247 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY process STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances The new patent pending strip layout coupled with the Company s proprietary edge termination structure gives the lowest RDS on per area exceptional avalanche and dv dt capabilities and unrivalled gate charge and switching characteristics APPLICATIONS HIGH CURRENT HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY SMPS s DC AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID ID IDM P tot dv dt 1 T stg Tj March 1999 Parameter Drain source Voltage V GS 0 Drain gate Voltage R GS 20 k Gate source Voltage Drain Current continuous at T c 25 C Drain Current continuous at T c 100
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Manufacturers : ST Microelectronics  |
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