[PDF] What is TIM1414-8L DATA? (551821)

The TIM1414-8L is Microwave Power GaAs FET made by Toshiba.

Brief overview of the content in a TIM1414-8L PDF file

www datasheetgo.com TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X Ku Band Features Low intermodulation distortion IM3 45 dBc at Po 28 dBm Single carrier level High power P1dB 39 5 dBm at 14 0 GHz to 14 5 GHz High gain G1dB 5 0 dB at 14 0 GHz to 14 5 GHz Broad band internally matched Hermetically sealed package RF Performance Speci cations Ta 25 C Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Ef ciency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise Symbol P1dB G1dB IDS1 G add IM3 IDS2 Tch VDSxIDSxRth c c Condition Unit dBm dB A dB Min 38 5 4 0 42 Typ 39 5 5 0 3 4 20 45 3 4 Max 4 4 0 8 4 4 80 TIM1414 8L VDS 9V f 14 0 14 5 GHz DataShee datasheetgo.com Note 1 dBc A C Note 1 2 Tone Test Pout 28 dBm Single Carrier Level Electrical Characteristics Ta 25 C Characteristic Trans conductance Pinch off Voltage Saturated Drain Current Gate Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth c c Condition VDS 3V IDS 4 0A VDS 3V IDS 120mA VDS 3V VGS 0V