The TIM1414-8 is Microwave Power GaAs FET made by Toshiba.
TIM1414-8 pinout

Brief overview of the content in a TIM1414-8 PDF file


www datasheetgo.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X Ku Band Features High power P1dB 39 5 dBm at 14 0 GHz to14 5 GHz High gain G1dB 5 0 dB at 14 0 GHz to 14 5 GHz Broad Band Internally Matched Hermetically sealed package RF Performance Speci cations Ta 25 C Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Ef ciency Channel Temperature Rise Symbol P1dB G1dB IDS add Tch VDS X IDS X Rth c c VDS 9V f 14 0 14 5GHz Condition Unit dBm dB A C Min 38 5 4 0 Typ 39 5 5 0 3 4 20 Max 4 4 80 TIM1414 8 DataShee Electrical Characteristics Ta 25 C Characteristic Trans conductance Pinch off Voltage Saturated Drain Current Gate to Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth c c datasheetgo.com Condition VDS 3V IDS 4 0 A VDS 3V IDS 120mA VDS 3V VGS 0V IGS 120 A Channel to case Unit mS V A V C W Min 2 5 Typ 2400 3 5 8 0 1 6 Max 5 10 4 2 5 datasheetgo.com The information contained here is subject to change without notice The information contained herein is presented only as guide for the applications of our products


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Manufacturers : Toshiba

TOSHIBA - TIM1414-8 Datasheet PDF

TOSHIBA TIM1414-8 DATA

Microwave Power GaAs FET


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