[PDF] What is TIM1414-5L DATA? (551816)

The TIM1414-5L is Microwave Power GaAs FET made by Toshiba.

Brief overview of the content in a TIM1414-5L PDF file

www datasheetgo.com TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH MICROWAVE POWER GaAs FET TIM1414 5L POWER P1dB 37 5dBm at 14 0GHz to 14 5GHz HIGH GAIN G1dB 6 0dB at 14 0GHz to 14 5GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta 25 C CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 IDS1 G1dB VDS 9V 5 0 Two Tone Test P 26dBm Single Carrier Level datasheetgo.com Tch VDS X IDS X Rth c c SYMBOL P1dB CONDITION MIN TYP MAX UNIT 37 0 37 5 6 0 2 0 23 45 2 0 2 5 2 5 80 dBm dB A dBc A C f 14 0 14 5GHz add IM3 42 DataShee ELECTRICAL CHARACTERISTICS Ta 25 C CHARACTERISTICS Transconductance Pinch off Voltage Saturated Drain Current Gate Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth c c CONDITION VDS 3V IDS 2 4A VDS 3V IDS 72mA VDS 3V VGS 0V IGS 72 A Channel to Case MIN TYP MAX UNIT 1400 mS 2 0 5 3 5 5 0 3 0 5 0 5 7 3 7 V A V C W The information contained herein is presented only as a gu