The TIM1414-4LA is Microwave Power GaAs FET made by Toshiba.
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Brief overview of the content in a TIM1414-4LA PDF file
www datasheetgo.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB 36 5dBm at 14 0GHz to 14 5GHz n HIGH GAIN G1dB 6 5dB at 14 0GHz to 14 5GHz TIM1414 4LA P reliminaly n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta 25 C CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB Compression Point VDS 9V Power Gain at 1dB G1dB f 14 0 to 14 5GHz Compression Point Drain Current IDS1 add Power Added Efficiency rd 3 Order Intermodulation IM3 Distortion NOTE Drain Current IDS2 Tchdatasheetgo.com Channel Temperature Rise VDS X IDS X Rth c c NOTE Two Tone Test Po 25dBm Single Carrier Level UNIT dBm dB A dBc A C MIN 36 0 6 0 42 TYP MAX 36 5 6 5 1 7 23 45 1 7 2 2 2 2 70 DataShee ELECTRICAL CHARACTERISTICS Ta 25 C CHARACTERISTICS Transconductance Pinch off Voltage Saturated Drain Current Gate Source Breakdown Voltage Thermal Resistance SYMBOL CONDITION VDS 3V IDS 2 0A VDS 3V IDS 60mA VDS 3V VGS 0V IGS 60 A Channel to Case UNIT mS V A V C W gm VGSoff IDSS VGSO Rth c c MIN 2 0 5 TYP 1200 3 5 4 0 2 9 MAX 5 0 5 2 3 5 u The information contained herein is pr
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Manufacturers : Toshiba  |
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