The TIM1414-4A is Microwave Power GaAs FET made by Toshiba.
TIM1414-4A pinout

Brief overview of the content in a TIM1414-4A PDF file


www datasheetgo.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X Ku Band Features High power P1dB 36 5 dBm at 14 0 GHz to 14 5 GHz High gain G1dB 6 5 dB at 14 0 GHz to 14 5 GHz Broad Band Internally Matched Hermetically sealed package RF Performance Speci cations Ta 25 C Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Ef ciency Channel Temperature Rise Symbol P1dB G1dB IDS add Tch VDS X IDS X Rth c c VDS 9V f 14 0 14 5 GHz Condition Unit dBm dB A C Min 36 0 6 0 Typ 36 5 6 5 1 7 23 Max 2 2 70 TIM1414 4A DataShee Electrical Characteristics Ta 25 C Characteristic Trans conductance Pinch off Voltage Saturated Drain Current Gate to Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth c c datasheetgo.com Condition VDS 3V IDS 2 0 A VDS 3V IDS 60mA VDS 3V VGS 0V IGS 60 A Channel to case Unit mS V A V C W Min 2 0 5 Typ 1200 3 5 4 0 2 9 Max 5 0 5 2 3 5 datasheetgo.com The information contained here is subject to change without notice The information contained herein is presented only as guide for the applications of our produ


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Manufacturers : Toshiba

TOSHIBA - TIM1414-4A Datasheet PDF

TOSHIBA TIM1414-4A DATA

Microwave Power GaAs FET


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