The TIM1414-2 is Microwave Power GaAs FET made by Toshiba.

Brief overview of the content in a TIM1414-2 PDF file
www datasheetgo.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X Ku Band Features High power P1dB 33 5 dBm at 14 0 GHz to 14 5 GHz High gain G1dB 6 5 dB at 14 0 GHz to 14 5 GHz Broadband internally matched Hermetically sealed package RF Performance Speci cations Ta 25 C Characteristic Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Ef ciency Channel Temperature Rise Symbol P1dB G1dB IDS add Tch VDS x IDS x Rth c c VDS 9V f 14 0 14 5 GHz A C 0 85 23 1 1 60 Condition Unit dBm dB Min 32 5 5 5 Typ 33 5 6 5 Max TIM1414 2 DataShee Electrical Characteristics Ta 25 C Characteristic Transconductance Pinch off Voltage Saturated Drain Current Gate Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth c c datasheetgo.com Condition VDS 3V IDS 1 0A VDS 3V IDS 30 mA VDS 3V VGS 0V IGS 30 A Channel to Case Unit mS V A V C W Min 2 5 Typ 600 3 5 2 0 5 Max 5 2 6 6 datasheetgo.com The information contained here is subject to change without notice The information contained herein is presented only as guide for the applications of our produc
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Manufacturers : Toshiba ![]() |
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