The TIM1414-18L is Microwave Power GaAs FET made by Toshiba.

Brief overview of the content in a TIM1414-18L PDF file
www datasheetgo.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM1414 18L PRELIMINARY n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB 42 5dBm at 14 0GHz to 14 5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB 6 0dB at 14 0GHz to 14 5GHz n LOW INTERMODULATION DISTORTION IM3 Min 30dBc at Po 36dBm Single Carrier Level RF PERFORMANCE SPECIFICATIONS Ta 25 C CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 Tch IDS1 G1dB SYMBOL P1dB VDS 9V IDSQ 4 4A dB A Two Tone Test datasheetgo.com Po 36 0dBm Single Carrier Level CONDITION UNIT MIN TYP MAX dBm 42 0 5 0 25 42 5 6 0 5 5 28 5 5 6 0 6 0 100 DataSh f 14 0 14 5GHz add IM3 dBc A C ee VDS X I DS X Rth c c ELECTRICAL CHARACTERISTICS Ta 25 C CHARACTERISTICS Transconductance Pinch off Voltage Saturated Drain Current Gate Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO CONDITION VDS 3V IDS 4 8A VDS 3V IDS 145mA VDS 3V VGS 0V IGS 145 A UNIT MIN TYP MAX mS 6000 V A V C W 0 7 5 1 6 10 0
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Manufacturers : Toshiba ![]() |
TOSHIBA TIM1414-18L DATA Microwave Power GaAs FET [ Datasheet Search ] |
[ TIM1414-18L PDF DownLoad ( TOSHIBA ) ] |
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