The TIM1414-10LA is Microwave Power GaAs FET made by Toshiba.
Brief overview of the content in a TIM1414-10LA PDF file
www datasheetgo.com TOSHIBA MICROWAVE POWER GaAs FET Features Low intermodulation distortion IM3 45 dBc at Po 29 0 dBm Single Carrier Level High power P1dB 40 5 dBm at 14 0 GHz to 14 5 GHz High gain G1dB 6 0 dB at 14 0 GHz to 14 5 GHz Broadband internally matched Hermetically sealed package RF Performance Speci cations Ta 25 C Characteristic Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Ef ciency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise Symbol P1dB G1dB IDS1 G add IM3 IDS2 Tch Note 1 VDS 9V f 14 0 14 5 GHz Condition Unit dBm dB A dB dBc Min 40 0 5 0 42 Typ 40 5 6 0 4 0 21 45 4 0 Max 5 0 0 8 TIM1414 10LA 5 0 90 DataShee datasheetgo.com VDS x IDS x Rth c c A C Note 1 2 tone Test Pout Po 29 0 dBm Single Carrier Level Electrical Characteristics Ta 25 C Characteristic Transconductance Pinch off Voltage Saturated Drain Current Gate Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth c c Condition VDS 3V IDS 4 8A VDS 3V IDS 145 mA VDS 3V VGS 0V IGS 145 A Channel to Case Unit mS V A V C W Mi
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Manufacturers : Toshiba  |
TOSHIBA TIM1414-10LA DATA Microwave Power GaAs FET [ Datasheet Search ] |
[ TIM1414-10LA PDF DownLoad ( TOSHIBA ) ] |
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