The TIM1414-10A is Microwave Power GAAS Fet made by Toshiba.

Brief overview of the content in a TIM1414-10A PDF file
www datasheetgo.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X Ku Band Features High power P1dB 40 5 dBm at 14 0 GHz to14 5 GHz High gain G1dB 6 0 dB at 14 0 GHz to 14 5 GHz Broad Band Internally Matched Hermetically sealed package RF Performance Speci cations Ta 25 C Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Ef ciency Channel Temperature Rise Symbol P1dB G1dB IDS add Tch VDS X IDS X Rth c c VDS 9V f 14 0 14 5GHz Condition Unit dBm dB A C Min 40 0 5 0 Typ 40 5 6 0 4 0 23 Max 5 0 90 TIM1414 10A DataShee Electrical Characteristics Ta 25 C Characteristic Trans conductance Pinch off Voltage Saturated Drain Current Gate to Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth c c datasheetgo.com Condition VDS 3V IDS 4 8 A VDS 3V IDS 145mA VDS 3V VGS 0V IGS 145 A Channel to case Unit mS V A V C W Min 2 0 5 Typ 2800 3 5 10 0 2 0 Max 5 0 11 5 2 5 datasheetgo.com The information contained here is subject to change without notice The information contained herein is presented only as guide for the applications of our prod
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Manufacturers : Toshiba ![]() |
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