The STF11N60DM2 is N-CHANNEL POWER MOSFET made by STMicroelectronics.
Brief overview of the content in a STF11N60DM2 PDF file
STF11N60DM2 N channel 600 V 0 370 typ 10 A MDmesh DM2 Power MOSFET in a TO 220FP package Datasheet production data 3 2 1 TO 220FP Figure 1 Internal schematic diagram Features Order code STF11N60DM2 VDS TJmax 650 V RDS on max 0 420 ID PTOT 10 A 25 W Fast recovery body diode Extremely low gate charge and input capacitance Low on resistance 100 avalanche tested Extremely high dv dt ruggedness Zener protected Applications Switching applications Description This high voltage N channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series It offers very low recovery charge Qrr and time trr combined with low RDS on rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase shift converters Order code STF11N60DM2 Table 1 Device summary Marking 11N60DM2 Package TO 220FP Packing Tube June 2016 DocID029386 Rev 1 This is information on a product in full
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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : STMicroelectronics  |
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