The SSF6N80F is N-Channel MOSFET made by SILIKRON.
SSF6N80F pinout

Brief overview of the content in a SSF6N80F PDF file

Main Product Characteristics VDSS RDS on 800V 2 2 typ ID 5 5A Features and Benefits TO220F Advanced MOSFET process technology Special designed for PWM load switching and general purpose applications Ultra low on resistance with low gate charge Fast switching and reverse body recovery 150 operating temperature SSF6N80F Marking and pin Assignment Schematic diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on resistance with high repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating Symbol ID TC 25 C ID TC 100 C IDM PD TC 25 C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current VGS 10V Continuous Drain Current VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Drain Source Voltage Gate to Source Voltage Single Pulse Avalanche Energy L 33 5mH Avalanche Current L 33 5mH Operating Junction and Storage Temperature Range Max 5 5 3 2 22 51 0 41 800 30 507 5 5 55 to 150 Units A W W C V V mJ A C Silikron Semiconductor CO LTD

[ Comprehensive information ]

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Manufacturers: SILIKRON



N-Channel MOSFET

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