The SPB80N06S2L-09 is OptiMOS Power-Transistor made by Infineon Technologies.
Brief overview of the content in a SPB80N06S2L-09 PDF file
SPP80N06S2L 09 SPB80N06S2L 09 OptiMOS Power Transistor Feature N Channel Product Summary VDS R DS on ID P TO263 3 2 55 8 5 80 P TO220 3 1 V m A Enhancement mode Logic Level 175 C operating temperature Avalanche rated dv dt rated Type SPP80N06S2L 09 SPB80N06S2L 09 Package P TO220 3 1 P TO263 3 2 Ordering Code Q67060 S6031 Q67060 S6032 Marking 2N06L09 2N06L09 Maximum Ratings at Tj 25 C unless otherwise specified Parameter Symbol Continuous drain current 1 TC 25 C Value 80 73 Unit A ID Pulsed drain current TC 25 C ID puls EAS EAR dv dt VGS Ptot T j Tstg 320 370 19 6 20 190 55 175 55 175 56 kV s V W C mJ Avalanche energy single pulse ID 80 A V DD 25V RGS 25 Repetitive avalanche energy limited by Tjmax 2 Reverse diode d v dt IS 80A VDS 44V di dt 200A s T jmax 175 C Gate source voltage Power dissipation TC 25 C Operating and storage temperature IEC climatic category DIN IEC 68 1 Page 1 2003 05 09 SPP80N06S2L 09 SPB80N06S2L 09 Thermal Characteristics Parameter Characteristics Thermal resistance junction case Thermal resistance junction ambient leaded SMD version device on PCB min footprint 6 cm2 cooling area 3 Symbol min RthJC RthJA RthJA Values typ
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Manufacturers : Infineon Technologies  |
INFINEON SPB80N06S2L-09 TRANSISTOR OptiMOS Power-Transistor [ Datasheet Search ] |
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