The RU6Z12P is N-Channel Advanced Power MOSFET made by Ruichips.
RU6Z12P pinout

Brief overview of the content in a RU6Z12P PDF file

RU6Z12P N Channel Advanced Power MOSFET Features 650V 12A RDS ON 340m Typ VGS 10V Ultra Low Rdson Fast Switching 100 avalanche tested Lead Free and Green Devices Available RoHS Compliant Pin Description Applications AC DC Power Conversion in Switched Mode Power Supplies SMPS Adapter LED driver Absolute Maximum Ratings Symbol Parameter Common Ratings TC 25 C Unless Otherwise Noted VDSS VGSS TJ TSTG IS Drain Source Voltage Gate Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300 s Pulse Drain Current Tested ID Continuous Drain Current VGS 10V PD Maximum Power Dissipation R JC Thermal Resistance Junction to Case R JA Thermal Resistance Junction to Ambient Drain Source Avalanche Ratings EAS Avalanche Energy Single Pulsed G DS TO220F D G S N Channel MOSFET Rating Unit TC 25 C 650 30 150 55 to 150 12 V C C A

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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Manufacturers : Ruichips

RUICHIPS - RU6Z12P Datasheet PDF


N-Channel Advanced Power MOSFET

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