The RU1H36R is N-Channel Advanced Power MOSFET made by Ruichips.
RU1H36R pinout

Brief overview of the content in a RU1H36R PDF file

RU1H36R N Channel Advanced Power MOSFET MOSFET Features 100V 32A RDS ON 34m Typ VGS 10V Super High Dense Cell Design Ultra Low On Resistance 100 avalanche tested Lead Free and Green Devices Available RoHS Compliant Pin Description TO 220 Applications DC DC Converters Synchronous Rectifier N Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings TC 25 C Unless Otherwise Noted VDSS Drain Source Voltage VGSS Gate Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC 25 C Mounted on Large Heat Sink IDP 300 s Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation R JC Thermal Resistance Junction to Case Drain Source Avalanche Ratings EAS Avalanche Energy Single Pulsed TC 25 C TC 25 C TC 100 C TC 25 C TC 100 C Copyright Ruichips Semiconductor Co Ltd Rev A MAR 2012 Rating 100 20 175 55 to 175

[ Comprehensive information ]

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Manufacturers : Ruichips

RUICHIPS - RU1H36R Datasheet PDF


N-Channel Advanced Power MOSFET

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