The RF1S30N06LE is N-Channel Enhancement-Mode Power MOSFETs made by Harris.
Brief overview of the content in a RF1S30N06LE PDF file
RFP30N06LE RF1S30N06LE SEMICONDUCTOR RF1S30N06LESM July 1995 30A 60V ESD Rated Avalanche Rated Logic Level N Channel Enhancement Mode Power MOSFETs Features 30A 60V rDS ON 0 047 2kV ESD Protected Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve Description The RFP30N06LE RF1S30N06LE and RF1S30N06LESM are N Channel power MOSFETs manufactured using the MegaFET process This process which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon resulting in outstanding performance They were designed for use in applications such as switching regulators switching converters motor drivers and relay drivers These transistors can be operated directly from integrated circuits These transistors incorporate ESD protection and are designed to withstand 2kV Human Body Model of ESD Packages JEDEC TO 220AB SOURCE DRAIN GATE DRAIN FLANGE JEDEC TO 262AA SOURCE DRAIN GATE DRAIN FLANGE A JEDEC TO 263AB GATE SOURCE MA A DRAIN FLANGE PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFP30N06LE TO 220AB F30N06LE RF1S30N06LE TO 262AA 1S30N06L RF1S30N06LESM TO 263AB 1S30N06L NOTE When ordering use the entire part number A
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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : Harris  |
HARRIS RF1S30N06LE MOSFET N-Channel Enhancement-Mode Power MOSFETs [ Datasheet Search ] |
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