[PDF] What is MJH16010 TRANSISTOR? (1079137)

The MJH16010 is Silicon NPN Power Transistor made by Inchange Semiconductor.

Brief overview of the content in a MJH16010 PDF file

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION Collector Emitter Voltage VCEO SUS 450V Min Low VCE sat IC 10A Fast switching speed 100 avalanche tested Minimum Lot to Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High voltage inverters Off line power supplies ABSOLUTE MAXIMUM RATINGS Ta 25 SYMBOL PARAMETER VALUE VCEV Collector Emitter Voltage 850 VCEO SUS Collector Emitter Voltage 450 VEBO Emitter Base Voltage 6 IC Collector Current Continuous 15 ICM Collector Current Peak 20 IB Base Current Continuous 10 IBM Base Current Peak 15 UNIT V V V A A A A PC Collector Power Dissipation TC 25 175 W Tj Junction Temperature Tstg Storage Temperature Range 55 150 55 150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R th j c Thermal Resistance Junction to Case 1 00 W isc Product Specification MJH16010 isc Website www iscsemi com 1 i

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Characteristics of NPN Transistors

1. Bipolar Junction: NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.

2. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.

3. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

4. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.

5. Inverted Output: NPN transistors are known for producing an inverted output relative to their input.

Manufacturers : Inchange Semiconductor