The IRHLUB770Z4 is (IRHLUB7x0Z4) POWER MOSFET made by International Rectifier.
Brief overview of the content in a IRHLUB770Z4 PDF file
www datasheetgo.com PD 95813 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB Product Summary Part Number Radiation Level RDS on IRHLUB770Z4 100K Rads Si 0 55 IRHLUB730Z4 300K Rads Si 0 55 IRHLUB740Z4 600K Rads Si 0 55 IRHLUB780Z4 1000K Rads Si 0 55 ID 0 8A 0 8A 0 8A 0 8A IRHLUB770Z4 60V N CHANNEL c TECHNOLOGY UB International Rectifier s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation This is achieved while maintaining single event gate rupture and single event burnout immunity These devices are used in applications such as current boost low signal source in PWM voltage comparator and operational amplifiers Features n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect SEE Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P Channel Available IRHLUB7970Z4 Absolute Maximum Ratings Parameter ID VGS 4 5V TC 25 C ID VGS 4 5V TC 100 C IDM PD TC 25 C VGS EAS IAR E
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Manufacturers : International Rectifier  |
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