The IRG7IC28UPBF is PDP TRENCH IGBT made by International Rectifier.
IRG7IC28UPBF pinout

Brief overview of the content in a IRG7IC28UPBF PDF file

PD 97562 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on and Energy per Pulse E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRG7IC28UPbF Key Parameters 600 1 70 225 150 V V A C VCE min VCE ON typ IC 40A IRP max TC 25 C TJ max c C G E E C G n channel G Gate C Collector TO 220AB Full Pak E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels This device utilizes advanced TM rating per silicon area which improve panel trench IGBT technology to achieve low CE on V and low E PULSE efficiency Additional features are 150 C operating junction temperature and high repetitive peak current capability These features combine to make this IGBT a highly efficient robust and reliable device for PDP applications Absolute Maximum Ratings Parameter VGE IC TC 25 C IC TC 100 C IRP TC 25 C PD TC 25 C PD TC 100 C TJ TSTG Gate to Emitter Voltage Continuous Collector Current VGE 15V Continuous Collector VGE 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temp

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An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Manufacturers : International Rectifier

IR - IRG7IC28UPBF Datasheet PDF



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