The IRG4BC30FD-S is INSULATED GATE BIPOLAR TRANSISTOR made by International Rectifier.
Brief overview of the content in a IRG4BC30FD-S PDF file
www datasheetgo.com PD 96929 IRG4BC30FD S INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Fast CoPack IGBT VCES 600V Features Fast optimized for medium operating frequencies 1 5 kHz in hard switching 20kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co packaged with HEXFREDTM ultrafast ultra soft recovery anti parallel diodes for use in bridge configurations G E VCE on typ 1 59V VGE 15V IC 17A n channel Benefits Generation 4 IGBT s offer highest efficiency available IGBT s optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT s Minimized recovery characteristics require less no snubbing Designed to be a drop in replacement for equivalent industry standard Generation 3 IR IGBT s D2Pak Absolute Maximum Ratings Parameter VCES IC TC 25 C IC TC 100 C ICM ILM IF TC 100 C IFM VGE PD TC 25 C TJ TSTG Collector to Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Ref Fig C T 5 Clamped Inductive Load current Max 600 31 17 120 120 12 120 20 100 42 55 to 150 Units V A d c Diode Continuous Forward Curre
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An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch. Manufacturers : International Rectifier  |
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