The IRF6668 is DirectFet Power MOSFET made by International Rectifier.

Brief overview of the content in a IRF6668 PDF file
www datasheetgo.com PD 97044A IRF6668 DirectFET Power MOSFET l l l l l l l l l RoHS compliant containing no lead or bromide Low Profile 0 7 mm Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques Typical values unless otherwise specified VDSS VGS RDS on Qg tot Qgd 7 8nC 80V max 20V max 12m 10V 22nC MZ Applicable DirectFET Outline and Substrate Outline see p 7 8 for details SH SJ SP MZ MN DirectFET ISOMETRIC The IRF6668 combines the latest HEXFET power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on state resistance in a package that has the footprint of an SO 8 and only 0 7 mm profile The DirectFET package is compatible with existing layout geometries used in power applications PCB assembly equipment and vapor phase infra red or convection soldering techniques when application note AN 1035 is followed regarding the manufacturing methods and processes The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems
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Manufacturers : International Rectifier ![]() |
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