The IRF6662 is DirectFet Power MOSFET made by International Rectifier.
Brief overview of the content in a IRF6662 PDF file
www datasheetgo.com PD 97039 IRF6662 DirectFET Power MOSFET Typical values unless otherwise specified Lead and Bromide Free Low Profile 0 7 mm Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques VDSS Qg tot VGS Qgd 6 8nC RDS on Vgs th 3 9V 100V max 20V max 17 5m 10V 22nC MZ Applicable DirectFET Outline and Substrate Outline see p 7 8 for details SQ SX ST MQ MX MT MZ DirectFET ISOMETRIC Description The IRF6662 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on state resistance in a package that has the footprint of an SO 8 and only 0 7 mm profile The DirectFET package is compatible with existing layout geometries used in power applications PCB assembly equipment and vapor phase infra red or convection soldering techniques when application note AN 1035 is followed regarding the manufacturing methods and processes The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems improving previous best
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Manufacturers : International Rectifier  |
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