The IRF1104S is (IRF1104L/S) HEXFET Power MOSFET made by International Rectifier.
Brief overview of the content in a IRF1104S PDF file
www datasheetgo.com PD 91845 IRF1104S L HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On Resistance Surface Mount IRF1104S Low profile through hole IRF1104L 175 C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS 40V RDS on 0 009 G ID 100A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area This benefit combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX 4 It provides the highest power capability and the lowest possible on resistance in any existing surface mount package The D2Pak is suitable for high current applications because datasheetgo.com of its low internal connection resistance and can dissipate up to 2 0W in a typical surface mount application The through hole version IRF1104L is available for lowprofile applications DataShee D 2 P ak T O 26 2 Absolute Maximum Ratings Parameter ID TC 25 C ID TC
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Manufacturers : International Rectifier  |
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