The IPI80N06S2L-05 is Power-Transistor made by Infineon Technologies.
Brief overview of the content in a IPI80N06S2L-05 PDF file
IPB80N06S2L 05 IPI80N06S2L 05 IPP80N06S2L 05 OptiMOS Power Transistor Features N channel Logic Level Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package lead free Ultra low Rds on 100 Avalanche tested PG TO263 3 2 Product Summary V DS R DS on max SMD version ID 55 4 5 80 V m A PG TO220 3 1 PG TO262 3 1 Type IPB80N06S2L 05 IPP80N06S2L 05 IPI80N06S2L 05 Package PG TO263 3 2 PG TO220 3 1 PG TO262 3 1 Ordering Code SP0002 19004 SP0002 19000 SP0002 19002 Marking 2N06L05 2N06L05 2N06L05 Maximum ratings at T j 25 C unless otherwise specified Parameter Continuous drain current1 Symbol ID Conditions T C 25 C V GS 10 V T C 100 C V GS 10 V2 Pulsed drain current2 Avalanche energy single pulse2 Gate source voltage4 Power dissipation Operating and storage temperature I D pulse E AS V GS P tot T j T stg T C 25 C T C 25 C I D 80 A Value 80 80 320 800 20 300 55 175 mJ V W C Unit A Rev 1 0 page 1 2006 03 13 http www datasheetgo.com IPB80N06S2L 05 IPI80N06S2L 05 IPP80N06S2L 05 Parameter Symbol Conditions min Thermal characteristics2 Thermal resistance junction case Thermal resistance junction ambient leaded SMD ver
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Manufacturers : Infineon Technologies  |
INFINEON IPI80N06S2L-05 TRANSISTOR Power-Transistor [ Datasheet Search ] |
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