The IPB80N06S2L-07 is Power-Transistor made by Infineon Technologies.
Brief overview of the content in a IPB80N06S2L-07 PDF file
OptiMOS Power Transistor Features N channel Logic Level Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package lead free Ultra low Rds on 100 Avalanche tested IPB80N06S2L 07 IPP80N06S2L 07 Product Summary V DS R DS on max SMD version ID 55 V 6 7 m 80 A PG TO263 3 2 PG TO220 3 1 Type IPB80N06S2L 07 IPP80N06S2L 07 Package Ordering Code Marking PG TO263 3 2 SP0002 18867 2N06L07 PG TO220 3 1 SP0002 18831 2N06L07 Maximum ratings at T j 25 C unless otherwise specified Parameter Symbol Conditions Continuous drain current1 Pulsed drain current2 Avalanche energy single pulse2 Gate source voltage4 Power dissipation Operating and storage temperature I D T C 25 C V GS 10 V T C 100 C V GS 10 V2 I D pulse T C 25 C E AS I D 80 A V GS P tot T C 25 C T j T stg Value 80 80 320 450 20 210 55 175 Unit A mJ V W C Rev 1 0 page 1 http store iiic cc 2005 12 27 Parameter Symbol Conditions Thermal characteristics2 Thermal resistance junction case R thJC Thermal resistance junction ambient leaded R thJA SMD version device on PCB R thJA minimal footprint 6 cm2 cooling area5 IPB80N06S2L 07 IPP80N06S2L 07 min
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Manufacturers : Infineon Technologies  |
INFINEON IPB80N06S2L-07 TRANSISTOR Power-Transistor [ Datasheet Search ] |
[ IPB80N06S2L-07 PDF DownLoad ( INFINEON ) ] |
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