The IKP20N60H3 is IGBT made by Infineon.
IKP20N60H3 pinout

Brief overview of the content in a IKP20N60H3 PDF file


IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft fast recovery anti parallel diode IKP20N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IKP20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features TRENCHSTOPTM technology offering very low VCEsat low EMI Very soft fast recovery anti parallel diode maximum junction temperature 175 C qualified according to JEDEC for target applications Pb free lead plating RoHS compliant complete product spectrum and PSpice Models http www infineon com igbt Applications uninterruptible power supplies welding converters converters with high switching frequency GC E G C C E Key Performance and Package Parameters Type VCE IC VCEsat Tvj 25 C IKP20N60H3 600V 20A 1 95V Tvjmax 175 C Marking K20H603 Package PG TO220 3 2 Rev 2 2 2014 03 12 IKP20N60H3 High speed switching series third generation Table of Contents Description 2 Table of Contents




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An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Manufacturers: Infineon

INFINEON - IKP20N60H3 Datasheet PDF

INFINEON IKP20N60H3 IGBT

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