The IKP06N60T is IGBT made by Infineon.
IKP06N60T pinout

Brief overview of the content in a IKP06N60T PDF file


TRENCHSTOP Series IKP06N60T p Low Loss DuoPack IGBT in TRENCHSTOP and Fieldstop technology with soft fast recovery anti parallel Emitter Controlled HE diode Features Very low VCE sat 1 5V typ Maximum Junction Temperature 175 C Short circuit withstand time 5 s Designed for Variable Speed Drive for washing machines air conditioners and induction cooking Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers very tight parameter distribution high ruggedness temperature stable behaviour Low EMI Very soft fast recovery anti parallel Emitter Controlled HE diode Qualified according to JEDEC1 for target applications Pb free lead plating RoHS compliant Complete product spectrum and PSpice Models http www infineon com igbt C G E PG TO220 3 Type IKP06N60T VCE 600V IC Tc 100 C VCE sat Tj 25 C Tj max 6A 1 5V 175 C Marking K06T60 Package PG TO220 3 Maximum Ratings Parameter Collector emitter voltage Tj 25 C DC collector current limited by Tjmax TC 25 C TC 100 C Pulsed collector current tp limited by Tjmax Turn off safe operating area VCE 600V Tj 175 C tp 1 s Diode forward current limited by Tjmax TC 25 C TC




[ Comprehensive information ]


An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Manufacturers: Infineon

INFINEON - IKP06N60T Datasheet PDF

INFINEON IKP06N60T IGBT

IGBT


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