The HFS50N06A is N-Channel MOSFET made by SemiHow.
Brief overview of the content in a HFS50N06A PDF file
HFS50N06A Oct 2015 HFS50N06A 60V N Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 27 nC Typ Extended Safe Operating Area Lower RDS ON Typ VGS 10V 100 Avalanche Tested BVDSS 60 V RDS on typ 18 P ID 50 A TO 220F 12 3 1 Gate 2 Drain 3 Source Absolute Maximum Ratings TC 25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain Source Voltage Drain Current Drain Current Drain Current Continuous TC 25 Continuous TC 100 Pulsed Note 1 Gate Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Power Dissipation TC 25 Derate above 25 60 50 0 35 4 200 25 490 50 12 48 0 32 TJ TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes 1 8 from case for 5 seconds 55 to 175 300 Drain current limited by maximum junction temperature Units V A A A V mJ A mJ W W Thermal Resistance Characteristics Symbol R JC R JA Parameter Junction
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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : SemiHow  |
SEMIHOW HFS50N06A MOSFET N-Channel MOSFET [ Datasheet Search ] |
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