The H02N60S is N-Channel Power Field Effect Transistor made by HI-SINCERITY.
H02N60S pinout

Brief overview of the content in a H02N60S PDF file


HI SINCERITY MICROELECTRONICS CORP Spec No MOS200504 Issued Date 2005 05 01 Revised Date 2005 09 28 Page No 1 6 H02N60S Series N Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degratding performance over time In addition this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes The new energy efficient design also offers a drain to source diode with a fast recovery time Designed for high voltage high speed switching applications in power supplies converters and PWM motor controls these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients Features Robust High Voltage Termination Avalanc he Energy Specified Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS on Specified at Elevated Temperature Absolute Maximum Ratings H02N60S Series Pin Assignment Tab 3 2 1 Tab 3 2 Tab 1 3 Lead Plastic TO 252 Package Code J Pin 1 Gate Pin 2




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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Manufacturers: HI-SINCERITY

HI-SINCERITY - H02N60S Datasheet PDF

HI-SINCERITY H02N60S TRANSISTOR

N-Channel Power Field Effect Transistor


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