The FP1189 is HFET made by WJ Communications.

Brief overview of the content in a FP1189 PDF file
www datasheetgo.com FP1189 Watt HFET The Communications Edge TM Product Information Product Features 50 4000 MHz 27 dBm P1dB 40 dBm Output IP3 High Drain Efficiency 20 5 dB Gain 900 MHz MTTF 100 Years SOT 89 SMT Package Product Description The FP1189 is a high performance Watt HFET Heterostructure FET in a low cost SOT 89 surfacemount package This device works optimally at a drain bias of 8 V and 125 mA to achieve 40 dBm output IP3 performance and an output power of 27 dBm at 1 dB compression while providing 20 5 dB gain at 900 MHz The device conforms to WJ Communications long history of producing high reliability and quality components The FP1189 has an associated MTTF of greater than 100 years at a mounting temperature of 85 C All devices are 100 RF DC tested The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required Functional Diagram GND 4 1 RF IN 2 GND 3 RF OUT Applications Mobile Infrastructure CATV DBS W LAN ISM RFID Defense Homeland Security Fixed Wireless Function Input Gate Output Drain Ground Pin No 1 3 2 4 Specifications DC Parameter Saturated Drain Current Idss
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Manufacturers : WJ Communications ![]() |
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