The FDS6679AZ is P-Channel PowerTrench MOSFET made by Fairchild Semiconductor.
FDS6679AZ pinout

Brief overview of the content in a FDS6679AZ PDF file

FDS6679AZ P Channel PowerTrench MOSFET FDS6679AZ P Channel PowerTrench MOSFET 30V 13A 9m General Description This P Channel MOSFET is producted using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on state resistance This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs March 2009 tm Features Max rDS on 9 3m at VGS 10V ID 13A Max rDS on 14 8m at VGS 4 5V ID 11A Extended VGS range 25V for battery applications HBM ESD protection level of 6kV typical note 3 High performance trench technology for extremely low rDS on High power and current handing capability RoHS Compliant D D D D 5 6 4 3 2 1 SO 8 S S S G 7 8 MOSFET Maximum Ratings TA 25 C unless otherwise noted Symbol VDS VGS ID PD TJ TSTG Operating and Storage Temperature Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 1a Note 1b Note 1c Note 1a Ratings 30 25 13 65 2 5 1 2 1 0 55 to 150 C W Units V V A Thermal Characteristics R JA R JC Thermal Resistance Junction to Ambient Note 1a

[ Comprehensive information ]

The gate is used to control the flow of current between the source and the drain terminals of the MOSFET. Compared to N-Channel MOSFETs, P-Channel MOSFETs have a lower conduction resistance, which results in lower power consumption and higher efficiency.

Manufacturers : Fairchild Semiconductor



P-Channel PowerTrench MOSFET

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