The AP25N10J-HF is N-CHANNEL ENHANCEMENT MODE POWER MOSFET made by Advanced Power Electronics.
Brief overview of the content in a AP25N10J-HF PDF file
AP25N10GH J HF Halogen Free Product Advanced Power Electronics Corp Low Gate Charge Single Drive Requirement RoHS Compliant Halogen Free G N CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS ON ID 100V 80m 23A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching ruggedized device design low on resistance and costeffectiveness The TO 252 package is widely preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC DC converters The through hole version AP25N10GJ are available for low profile applications G D S TO 252 H G D S TO 251 J Absolute Maximum Ratings Symbol VDS VGS ID TC 25 ID TC 100 IDM PD TC 25 TSTG TJ Parameter Drain Source Voltage Gate Source Voltage Continuous Drain Current VGS 10V Continuous Drain Current VGS 10V Pulsed Drain Current 1 Rating 100 20 23 14 6 80 96 0 77 55 to 150 55 to 150 Units V V A A A W W Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj c Rthj a Rthj a Parameter Maximum Thermal Resistance Junction case Maximum Thermal Resistance Junction ambient PCB moun
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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : Advanced Power Electronics  |
APE AP25N10J-HF MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET [ Datasheet Search ] |
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