The AP25N10GJ-HF is N-CHANNEL ENHANCEMENT MODE POWER MOSFET made by Advanced Power Electronics.
Brief overview of the content in a AP25N10GJ-HF PDF file
Advanced Power Electronics Corp AP25N10GH J HF Halogen Free Product N CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge Single Drive Requirement RoHS Compliant Halogen Free G D S BVDSS RDS ON ID 100V 80m 23A Description AP25N10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on resistance and fast switching performance It provides the designer with an extreme efficient device for use in a wide range of power applications The TO 252 package is widely preferred for all commercial industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance The through hole version AP25N10GJ are available for low profile applications G D S TO 252 H G D S TO 251 J Absolute Maximum Ratings Tj 25oC unless otherwise specified Symbol Parameter Rating Units VDS VGS ID TC 25 ID TC 100 IDM PD TC 25 TSTG TJ D
[ Comprehensive information ] |
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : Advanced Power Electronics  |
APE AP25N10GJ-HF MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET [ Datasheet Search ] |
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