The AON6712 is N-Channel MOSFET made by Alpha & Omega Semiconductors.
Brief overview of the content in a AON6712 PDF file
SRFET AON6712 N Channel Enhancement Mode Field Effect Transistor TM General Description The AON6712 uses advanced trench technology to provide excellent RDS ON low gate charge This device is suitable for use as a high side switch in SMPS and general purpose applications Standard Product AON6712 is Pb free meets ROHS Sony 259 specifications Features VDS V 30V ID 20A VGS 10V RDS ON 5 5m VGS 10V RDS ON 6 5m VGS 4 5V Top View Fits SOIC8 footprint S S S G D D D D G D SRFET TM Soft Recovery MOSFET Integrated Schottky Diode S DFN5X6 Absolute Maximum Ratings TA 25 C unless otherwise noted Parameter Symbol VDS Drain Source Voltage VGS Gate Source Voltage Continuous Drain B J Current TC 25 C TC 100 C ID IDM IDSM IAR C Maximum 30 12 30 30 80 16 13 42 264 62 5 25 2 5 1 6 55 to 150 Units V V A Pulsed Drain Current Continuous Drain TA 25 C H Current TA 70 C C Avalanche Current Repetitive avalanche energy L 0 3mH Power Dissipation B A A mJ W W C EAR PD PDSM TJ TSTG TC 25 C TC 100 C TA 25 C TA 70 C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction to Ambient Maximum Junction to Ambient A Maximum Junction to Case C Symbol t 10s Steady State
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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : Alpha & Omega Semiconductors  |
AOS AON6712 MOSFET N-Channel MOSFET [ Datasheet Search ] |
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