The AON6564 is N-Channel MOSFET made by Alpha & Omega Semiconductors.
Brief overview of the content in a AON6564 PDF file
AON6564 30V N Channel AlphaMOS General Description Latest Trench Power AlphaMOS MOS LV technology Very Low RDS on at 4 5VGS Low Gate Charge High Current Capability RoHS and Halogen Free Compliant Product Summary VDS ID at VGS 10V RDS ON at VGS 10V RDS ON at VGS 4 5V 30V 32A 5m 8 5m Application DC DC Converters in Computing Servers and POL Isolated DC DC Converters in Telecom and Industrial 100 UIS Tested 100 Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA 25 C unless otherwise noted Parameter Symbol Drain Source Voltage VDS Gate Source Voltage Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L 0 05mH C VDS Spike Power Dissipation B Power Dissipation A 100ns TC 25 C TC 100 C TA 25 C TA 70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction to Ambient A Maximum Junction to Ambient A D Maximum Junction to Case C Maximum 30 20 32 25 128 29 23 36 32 36 25 10 6 3 8 55 to 150 Units V V A VGS TC 25 C TC 100 C TA 25 C TA 70 C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ TSTG A A mJ V W W C Symbol t 10s Steady State Steady St
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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : Alpha & Omega Semiconductors  |
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