The AON6484 is N-Channel MOSFET made by Freescale.

Brief overview of the content in a AON6484 PDF file
AON6484 100V N Channel MOSFET General Description The AON6484 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON This device is ideal for boost converters and synchronous rectifiers for consumer telecom industrial power supplies and LED backlighting Features VDS ID at VGS 10V RDS ON at VGS 10V RDS ON at VGS 4 5V 100V 12A 79m 90m Top View 1 2 3 4 D 8 7 6 5 G S Absolute Maximum Ratings TA 25 C unless otherwise noted Parameter Symbol Drain Source Voltage VDS Gate Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L 0 1mH C TC 25 C Power Dissipation B Power Dissipation A TC 100 C TA 25 C TA 70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction to Ambient A Maximum Junction to Ambient A D Maximum Junction to Case C Maximum 100 20 12 0 7 5 27 3 3 2 7 14 10 25 0 10 0 2 1 3 55 to 150 Units V V A VGS TC 25 C TC 100 C C TA 25 TA 70 C ID IDM IDSM IAS IAR EAS EAR PD PDSM TJ TSTG A A mJ W W C Symbol t 10s Steady State Steady State R JA R JC Typ 21 50 3 5 Max 25 60 5 Units C W C W C W 1 6 www freescale net cn Free Datasheet
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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : Freescale ![]() |
FREESCALE AON6484 MOSFET N-Channel MOSFET [ Datasheet Search ] |
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