The AON6482 is N-Channel MOSFET made by Alpha & Omega Semiconductors.
AON6482 pinout

Brief overview of the content in a AON6482 PDF file


AON6482 100V N Channel MOSFET General Description The AON6482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON This device is ideal for boost converters and synchronous rectifiers for consumer telecom industrial power supplies and LED backlighting Product Summary VDS ID at VGS 10V RDS ON at VGS 10V RDS ON at VGS 4 5V 100V 28A 37m 42m 100 UIS Tested 100 Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View 8 7 6 5 D G S PIN1 Absolute Maximum Ratings TA 25 C unless otherwise noted Symbol Parameter Drain Source Voltage VDS Gate Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L 0 1mH C TC 25 C Power Dissipation B Power Dissipation A TC 100 C TA 25 C TA 70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction to Ambient A Maximum Junction to Ambient A D Maximum Junction to Case C Maximum 100 20 28 18 70 5 5 4 4 35 61 63 25 2 5 1 6 55 to 150 Units V V A VGS TC 25 C C TC 100 TA 25 C TA 70 C ID IDM IDSM IAS IAR EAS EAR PD PDSM TJ TSTG A A mJ W W C Symbol t 10s Steady State Steady State R JA R JC Typ 14 2 42 1 2 Max 20 50 2 U


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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Manufacturers : Alpha & Omega Semiconductors

AOS - AON6482 Datasheet PDF

AOS AON6482 MOSFET

N-Channel MOSFET


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