The AON6435 is N-Channel MOSFET made by Alpha & Omega Semiconductors.
Brief overview of the content in a AON6435 PDF file
AON6435 30V P Channel MOSFET General Description The AON6435 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON This device is ideal for load switch and battery protection applications Product Summary VDS ID at VGS 10V RDS ON at VGS 10V RDS ON at VGS 5V 30V 34A 17m 34m 100 UIS Tested 100 Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA 25 C unless otherwise noted Parameter Symbol Drain Source Voltage VDS Gate Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L 0 1mH C TC 25 C Power Dissipation B Power Dissipation A C TC 100 TA 25 C TA 70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction to Ambient A Maximum Junction to Ambient A D Maximum Junction to Case C Maximum 30 25 34 21 5 95 12 10 24 29 31 12 5 4 1 2 6 55 to 150 Units V V A VGS TC 25 C TC 100 C TA 25 C TA 70 C ID IDM IDSM IAS EAS PD PDSM TJ TSTG A A mJ W W C Symbol t 10s Steady State Steady State R JA R JC Typ 24 53 3 4 Max 30 64 4 Units C W C W C W Rev 0 Sep 2011 www aosmd com Page 1 of
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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : Alpha & Omega Semiconductors  |
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