The AON6426L is N-Channel MOSFET made by Alpha & Omega Semiconductors.
Brief overview of the content in a AON6426L PDF file
AON6426L N Channel Enhancement Mode Field Effect Transistor General Description The AON6426L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON This device is ideal for load switch and battery protection applications Features VDS V 30V ID 24A RDS ON 5 5m RDS ON 7 5m VGS 10V VGS 10V VGS 4 5V RoHS Compliant Halogen Free 100 UIS Tested 100 R g Tested Top View Fits SOIC8 footprint S S S G D D D D G D DFN5X6 Absolute Maximum Ratings TA 25 C unless otherwise noted Parameter Symbol Drain Source Voltage VDS Gate Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Repetitive avalanche energy L 0 1mH C TC 25 Power Dissipation B Power Dissipation A C S Maximum 30 20 24 19 130 14 11 42 88 42 17 2 1 2 55 to 150 Units V V A VGS TC 25 C TC 100 C TA 25 C TA 70 C ID IDM IDSM IAR EAR PD PDSM TJ TSTG A A mJ W W C TC 100 C TA 25 C TA 70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction to Ambient A Maximum Junction to Ambient A D Maximum Junction to Case Symbol t 10s Steady State Steady State R JA R JC Typ 24 53 2 6 Max 30 64 3 Units C
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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : Alpha & Omega Semiconductors  |
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AON6426 Mosfet N-Channel MOSFET, Freescale  Preview |