The AON6405L is N-Channel MOSFET made by Alpha & Omega Semiconductors.

Brief overview of the content in a AON6405L PDF file
AON6405L P Channel Enhancement Mode Field Effect Transistor General Description The AON6405L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON This device is ideal for load switch and battery protection applications Features VDS V 30V VGS 10V ID 30A RDS ON 7m VGS 10V RDS ON 8m VGS 4 5V ESD Protected 100 UIS Tested RoHS Compliant Halogen Free Top View Fits SOIC8 footprint S S S G D D D D G Rg D DFN5X6 Absolute Maximum Ratings TA 25 C unless otherwise noted Parameter Symbol VDS Drain Source Voltage VGS Gate Source Voltage Continuous Drain G Current Pulsed Drain Current Continuous Drain Current Avalanche Current C C S Maximum 30 20 30 23 160 15 12 54 146 83 33 2 5 1 6 55 to 150 Units V V A TC 25 C TC 100 C TA 25 C TA 70 C C ID IDM IDSM IAR EAR PD PDSM TJ TSTG A A mJ W W C Repetitive avalanche energy L 0 1mH Power Dissipation B TC 25 C TC 100 C TA 25 C TA 70 C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction to Ambient Maximum Junction to Ambient AD Maximum Junction to Case Symbol t 10s Steady State Steady State R JA R JC Typ 14 2 42 1 2 Max 17 50 1 5 Units
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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : Alpha & Omega Semiconductors ![]() |
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