The AON6403 is N-Channel MOSFET made by Alpha & Omega Semiconductors.

Brief overview of the content in a AON6403 PDF file
AON6403 30V P Channel MOSFET General Description The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON This device is ideal for load switch and battery protection applications Product Summary VDS ID at VGS 10V RDS ON at VGS 10V RDS ON at VGS 4 5V 30V 85A 3 1m 4 3m 100 UIS Tested 100 Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 D Top View 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA 25 C unless otherwise noted Parameter Symbol Drain Source Voltage VDS Gate Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L 0 1mH C TC 25 C Power Dissipation B C Maximum 30 20 85 67 280 21 17 72 259 83 33 2 3 1 4 55 to 150 Units V V A VGS TC 25 C C TC 100 TA 25 C TA 70 C ID IDM IDSM IAR EAR PD PDSM TJ TSTG A A mJ W W C C TC 100 TA 25 C TA 70 C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction to Ambient A Maximum Junction to Ambient A D Maximum Junction to Case Symbol t 10s Steady State Steady State R JA R JC Typ 14 40 1 Max 17 55 1 5 Units C W C W C W Rev 2 November 2010
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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : Alpha & Omega Semiconductors ![]() |
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