The AON6280 is N-Channel MOSFET made by Alpha & Omega Semiconductors.

Brief overview of the content in a AON6280 PDF file
AON6280 80V N Channel MOSFET General Description The AON6280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance Both conduction and switching power losses are minimized due to an extremely low combination of RDS ON Ciss and Coss This device is ideal for boost converters and synchronous rectifiers for consumer telecom industrial power supplies and LED backlighting Product Summary VDS ID at VGS 10V RDS ON at VGS 10V RDS ON at VGS 6V 80V 85A 4 1m 5 0m 100 UIS Tested 100 Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA 25 C unless otherwise noted Parameter Symbol Drain Source Voltage VDS Gate Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C C Maximum 80 20 85 65 230 17 13 50 125 83 33 7 3 4 7 55 to 150 Units V V A VGS TC 25 C TC 100 C TA 25 C TA 70 C ID IDM IDSM IAS EAS PD PDSM TJ TSTG A A mJ W W C Avalanche energy L 0 1mH TC 25 C Power Dissipation B Power Dissipation A TC 100 C TA 25 C TA 70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction to Ambient A Maximum Junction to
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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : Alpha & Omega Semiconductors ![]() |
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