The AON6250 is N-Channel MOSFET made by Alpha & Omega Semiconductors.
Brief overview of the content in a AON6250 PDF file
AON6250 150V N Channel MOSFET General Description The AON6250 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance Both conduction and switching power losses are minimized due to an extremely low combination of RDS ON Ciss and Coss This device is ideal for boost converters and synchronous rectifiers for consumer telecom industrial power supplies and LED backlighting Product Summary VDS ID at VGS 10V RDS ON at VGS 10V RDS ON at VGS 6V 150V 52A 16 5m 19m 100 UIS Tested 100 Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA 25 C unless otherwise noted Parameter Symbol Drain Source Voltage VDS Gate Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Maximum 150 20 52 32 112 13 5 10 5 33 163 104 41 5 7 4 4 7 55 to 150 Units V V A VGS TC 25 C TC 100 C TA 25 C TA 70 C ID IDM IDSM IAS EAS PD PDSM TJ TSTG A A mJ W W C Avalanche energy L 0 3mH C TC 25 C Power Dissipation B Power Dissipation A TC 100 C TA 25 C TA 70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction to Ambient A Maximum J
[ Comprehensive information ] |
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : Alpha & Omega Semiconductors  |
AOS AON6250 MOSFET N-Channel MOSFET [ Datasheet Search ] |
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