The AON6210 is 30V N-Channel MOSFET made by Freescale.
Brief overview of the content in a AON6210 PDF file
AON6210 30V N Channel MOSFET General Description The AON6210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance Conduction and switching losses are minimized due to an extremely low combination of RDS ON and Crss In addition switching behavior is well controlled with a Schottky style soft recovery body diode Features VDS ID at VGS 10V RDS ON at VGS 10V RDS ON at VGS 4 5V 30V 85A 1 8m 2 5m D Top View 1 2 3 4 8 7 6 5 G S Absolute Maximum Ratings TA 25 C unless otherwise noted Parameter Symbol VDS Drain Source Voltage VGS Gate Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Maximum 30 20 85 67 350 28 22 85 361 83 33 2 3 1 5 55 to 150 Units V V A TC 25 C TC 100 C TA 25 C TA 70 C ID IDM IDSM IAS IAR EAS EAR PD PDSM TJ TSTG A A mJ W W C Avalanche energy L 0 1mH C TC 25 C Power Dissipation B TC 100 C TA 25 C TA 70 C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction to Ambient A AD Maximum Junction to Ambient Maximum Junction to Case Symbol t 10s Steady State Steady State R JA R JC Typ 14 40 1 Max 17 55 1 5 Uni
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When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators. Manufacturers : Freescale  |
FREESCALE AON6210 MOSFET 30V N-Channel MOSFET [ Datasheet Search ] |
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