The 6MBP10VAA120-50 is IGBT Module made by Fuji Electric.
6MBP10VAA120-50 pinout

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http www fujielectric com products semiconductor 6MBP10VAA120 50 IGBT Modules IGBT MODULE V series 1200V 10A IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrease in number of parts in built in control circuit Maximum Ratings and Characteristics Absolute Maximum Ratings TC 25 C VCC 15V unless otherwise specified Items Symbol Min Collector Emitter Voltage 1 VCES 0 Short Circuit Voltage VSC 400 DC IC Collector Current 1ms Icp Duty 89 2 IC Collector Power Dissipation 1 device 3 PC Supply Voltage of Pre Driver 4 VCC 0 5 Input Signal Voltage 5 Vin 0 5 Alarm Signal Voltage 6 VALM 0 5 Alarm Signal Current 7 IALM Junction Temperature Tj Operating Case Temperature Topr 20 Storage Temperature Tstg 40 Solder Temperature 8 Tsol Isolating Voltage 9 Viso Screw Torque Mounting M4 Note 1 VCES shall be applied to the input voltage between terminal P U V W and U V W N Note 2 Duty 125 C Rth j c D IF VF Max 100 Note 3 PC 125


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An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Manufacturers : Fuji Electric

FUJI - 6MBP10VAA120-50 Datasheet PDF

FUJI 6MBP10VAA120-50 IGBT

IGBT Module


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