The 6MBI75U4A-120 is IGBT Module made by Fuji Electric.
Brief overview of the content in a 6MBI75U4A-120 PDF file
SPECIFICATION Device Name IGBT MODULE Type Name 6MBI75U4A 120 Spec No MS5F 6027 Feb 02 05 S Miyashita Feb 02 05 M W atanabe Y Seki K Yamada MS5F6027 1 13 H04 004 07b Revised Records Date Classification Ind Feb 02 05 Enactment Content Applied date Drawn Checked Checked Approved Issued date M W atanabe K Yamada Y Seki MS5F6027 2 13 H04 004 06b 1 Outline Drawing Unit mm 6MBI75U4A 120 2 Equivalent circuit 25 2 6 1 2 27 2 8 3 4 U 23 2 4 5 6 7 8 shows theoretical dimension shows reference dimension V 21 2 2 9 10 11 12 15 1 6 17 18 W 19 2 0 13 1 4 MS5F6027 3 13 H04 004 03a 3 Absolute Maximum Ratings at Tc 25oC unless otherwise specified It em s Sym b o l s Conditions Max i m u m Ratings Units Collector Emitter voltage VCES 1200 V Gate Emitter voltage VGES 20 V Ic Continuous Tc 25oC Tc 80oC 100 75 Collector current Icp 1ms Tc 25oC Tc 80oC 200 150 A Ic 75 Ic pulse 1ms 150 Collector Power Dissipation Pc 1 device 390 W Junction temperature Storage temperature Tj Tstg 150 40 to 125 oC Isolation between terminal and copper base 1 voltage between thermistor and others 2 Viso AC 1min 2500 VAC Screw Torque Mounting 3 3 5 N m 1 Al
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An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance. Manufacturers : Fuji Electric  |
FUJI 6MBI75U4A-120 IGBT IGBT Module [ Datasheet Search ] |
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