The 4MBI200T-060 is IGBT Module made by Fuji Electric.
Brief overview of the content in a 4MBI200T-060 PDF file
SPECIFICATION Device Name Type Name Spec No IGBT Module 4MBI200T 060 MS5F 05498 Jun 16 03 K Muramatsu Jun 17 03 T Miyasaka T Fujihira K Yamada Fuji Electric Co Ltd Matsumoto Factory MS5F 05498 1 14 H04 004 07 Revised Records Date Classification Ind Jun 17 03 enactment Content Applied date Issued date Drawn Checked Approved T Miyasaka T Fujihira K Yamada MS5F 05498 2 14 H04 004 06 1 Outline Drawing Unit mm 4MBI200T 060 2 Equivalent circuit Inverter 13 17 14 U 18 5 6 15 19 16 20 shows reference dimension 21 22 Thermistor 89 V 2 3 1 24 MS5F 05498 3 14 H04 004 03 3 Absolute Maximum Ratings at Tc 25 unless otherwise specified Items Symbols Conditions Collector Emitter voltage Gate Emitter voltage VCES VGES Ic 1mA Ic Duty 100 Collector current Collector Power Dissipation Junction temperature Ic pulse IF IF pulse Pc Tj 1ms Duty 50 1ms 1 device Storage temperature Tstg Isolation voltage 1 Viso AC 1min Screw Torque Mounting 2 1 All terminals should be connected together when isolation test will be done 2 Recommendable Value Mounting 2 5 3 5 N m M5 Maximum Ratings 600 20 200 400 200 400 540 150 40 125 2500 3 5 Units V V A W V Nm Inverter 4
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An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance. Manufacturers : Fuji Electric  |
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